Phase Transitions and Annealing Temperature Effect on Thermoelectric Properties of Zinc–Antimony Thin Films

Abstract

ZnSb samples were prepared by cold pressing technique for bulk and co-sputtering for thin film, followed by 337k, annealing temperature. The structural and morphological analysis of the samples has been carried out by X-ray diffraction (XRD), and Scanning electron microscope (SEM) techniques. XRD analysis confirms the orthorhombic ZnSb phase, orthorhombic crystal structure with different space groupsfor Zn₈Sb₇ thin film,and Zn₃₆Sb₃₀ with crystal system of trigonal for annealing thin film samples. The figures of meritand Seebeck coefficient values of zinc antimony samples were measured. The experimental results demonstrated zinc antimony with differentcrystal structures is a promising approach to enhancing the thermoelectric properties of ZnSb.The electric properties, Hall effect, and carrier concentrations of ZnSb during phase transitions were studied to optimize its performance.