Application Of Dielectric And Conductive Epitaxial Films In Silicon Technology
Keywords:
epitaxy, molecular beam epitaxy, epitaxial film, temperature, film, disilicide, thickness, intensity, heterostructures, heteroepitaxial layers.Abstract
In this paper the authors discuss a variety of solid-state electronic devices designed on the basis of different combinations of epitaxial layered dielectric and metal films in silicon technology that allows to create novel devices, including the devices operating on principles of quantum effects. The paper reports Molecular Beam Epitaxy (MBE) technology for creating a new type of device. Intensive experimental research in the field of epitaxial growth of metals and dielectrics on surface of silicon and the study of their physical properties would most likely in the near future serve as a platform for the increased application of silicon devices that might displace other materials traditionally used in high frequency electronics (А3 В5, А2 В6), IR and UV - photo electronics.
